InGaP/GaAs/lnGaAs 5-doped p-channel field-effect transistor with p~+~+/p camel-like gate structure

摘要

A new InGaP/GaAs/lnGaAs camel-like gate field-effect transistor with a δ-doped p-channel is investigated. Owing to the p-n depletion of the camel-like gate structure, the considerable conduction band discontinuity at the p-GaAs/i-InGaAs heterojunction, and the confinement effect for holes in the InGaAs quantum well, simultaneously, a large gate turn-on voltage up to 2.3 V is obtained. Experimental results exhibit a maximum extrinsic transconductance of 34 mS/mm and a saturation current density of 233 mA/mm. An extremely broad gate voltage swing greater than 6 V with above 80% maximum transconductance is achieved. The f_t and f_(max) are of 3.2 and 6.7 GHz, respectively.