The Use of SiC Triode Structures as Detectors of Nuclear Particles

摘要

The possibility of the internal amplificat on of the signal by a factor of approximately 100 for SiC-based detectors of short-range ions was demonstrated. The detectors were fabricated from the growth of p-epilayers on 6H-SiC n~+-substrates. The film thickness was approximately 10 μm, and the doping level was 2.8 * 10~(15) cm~(-3). The Schottky barriers were formed on the films by magnetron sputtering of Ni. The structure of the detectors was n-p-n~+, and their parameters were investigated in the floating-base mode. The α particles from ~(244)Cm with an energy of 5.8 MeV were used, and the increase in the signal (E) with a rise in applied voltage (U) was investigated. The structures irradiated are equivalent to the phototriodes. The superlinear rise of E was observed with a considerable (by a factor of tens) amplification of the nonequilibrium charge introduced by the α particle.