Increased viewing angle and light extraction efficiency of flip-chip light-emitting diode using double-side patterned sapphire substrate

摘要

Highly optical performances of flip-chip light-emitting diodes, employing double-side patterned sapphire substrates with various heights (0,280, and 650 nm) of textures on the bottom surfaces of the substrates, are evaluated. At 700 mA, the chip (280 nm) delivers higher power of 728.3 mW in comparison to the characteristics in the cases of 0 nm (708.4 mW) and 650 nm (702.2 mW). A wide radiation pattern as well as a large viewing angle of such a chip is demonstrated. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.