Metal Organic Cluster Photoresists for EUV Lithography

摘要

Extreme ultraviolet (EUV) lithography is a prominent candidate for printing under 10nm half pitch patterns. Recently, we have developed metal organic cluster resists possessing higher EUV absorbing elements and controlled molecular size and distribution. Here, we report lithographic performance of zirconium organic cluster and zinc organic luster resists. EUV exposure results for the zinc organic cluster resists on different underlayers are also discussed.