Development of metal organic cluster EUV photoresists

摘要

Extreme ultraviolet (EUV) lithography, using 13.5 nm radiations, is almost ready for high volume manufacturing. EUVlithography is expected to be the main technology for manufacturing leading-edge devices and continuous improvementof lithography performance is still needed. We have developed several metal oxide containing resists and recentlyfocused on metal organic cluster photoresists with controlled size distribution. In this paper, material properties andlithography performance of our new metal organic cluster photoresists are discussed.