Enlightening gallium nitride-based UV photodetectors

摘要

This article highlights the emerging demand for gallium nitride (GaN) semiconductor technology that offers superior optoelectronic properties making it suitable for highly efficient ultraviolet (UV) photodetection devices. An overview of the required physical mechanisms and a background review of the latest approaches for highly responsive GaN-based UV photodetectors are compiled and the future perspective for optoelectronic devices is discussed. It was proposed that the GaN subfield is directed towards integration with two-dimensional materials for futuristic applications. Finally, this article provides open questions for future researchers and suggests a direction for possible solutions to the problems faced during the development of highly efficient optoelectronic devices.