Method of growing a gallium nitride semiconductor film for the gallium nitride-based semiconductor electronic devices , a method of fabricating a gallium nitride-based semiconductor electronic devices , the epitaxial substrates , and gallium nitride-based semiconductor electronic devices

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial substrate comprising a gallium nitride based semiconductor film capable of providing excellent surface morphology and excellent carrier concentration.;SOLUTION: A main surface of a GaN wafer comprises an area (b) to an area (e). The area (b) exhibits hexagonal pyramid-shaped morphology near a position where off angle is zero. The area (c) exhibits very flat surface morphology in a range of the off angle of not less than 0.2 degrees and 1.0 degree or less in a 1-100 direction and not less than -0.3 degrees and +0.3 degrees or less in a 1-210 direction. The area (d) exhibits linear surface morphology in an area sandwiched by the area (b) and the area (c), where the synthetic off angle is 1.0 degree or less. The area (e) exhibits dot-shaped surface morphology in an area where the synthetic off angle exceeds 1.0 degree.;COPYRIGHT: (C)2014,JPO&INPIT