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Nanocrystalline diamond films grown at very low substrate temperature using a distributed antenna array microwave process: Towards polymeric substrate coating

机译:使用分布式天线阵列微波工艺在非常低的基板温度下生长纳米晶金刚石薄膜:朝向聚合物基材涂层

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摘要

The growth of NanoCrystalline Diamond (NCD) films at very low substrate temperature on large area surface using a distributed antenna array (DAA) microwave reactor operating in H-2/CH4/CO2 gas mixture is investigated. The estimated activation energy is in the range 13-3.2 kcal.mol(-1) depending on the injected microwave power and resulting substrate temperature range, which is comparable to values reported for other low-temperature NCD growth processes. The ability of the DM reactor to deposit NCD films at a surface temperature down to 130 degrees C is demonstrated. NCD films composed of nanometric grains of 4.5 nm with a surface roughness of 27 nm are thus obtained, with a growth rate of 5 mu.h(-1). The decrease of the deposition temperature is followed by an increase of the renucleation rate leading to a reduction of the grain size and to a subsequent promotion of non-diamond phases. At this temperature, the decrease of the CH4 percentage in the feed gas permits to improve the film purity but leads to a drastic decrease of the growth rate down to 2.5 nm.h(-1). Finally, a successful attempt of NCD film deposition on polytetrafluoroethylene (PTFE) substrate is shown aiming at exploring the coating of temperature-sensitive polymeric substrates employed for biomedical applications. (C) 2017 Elsevier B.V. All rights reserved.
机译:研究了使用分布天线阵列(DAA)在H-2 / CH4 / CO 2气体混合物中操作的大面积表面上的大面积表面上的纳米晶金刚石(NCD)膜的生长。估计的激活能量在13-3.2 kcal.mol(-1)范围内,这取决于注入的微波功率和得到的衬底温度范围,其与其他低温NCD生长过程报告的值相当。对DM反应器在表面温度下沉积NCD薄膜的能力降低至130℃。由此获得由表面粗糙度为4.5nm的纳米晶粒组成的NCD薄膜,生长速率为5μH(-1)。沉积温度的降低随后是导致晶粒尺寸减少和随后促进非金刚石阶段的rencuclation速率的降低。在该温度下,进料气体中的CH4百分比减少允许改善膜纯度,但导致生长速率的急剧下降至2.5nm.h(-1)。最后,示出了在聚四氟乙烯(PTFE)衬底上的NCD膜沉积的成功尝试,旨在探索用于生物医学应用的温度敏感聚合物基材的涂层。 (c)2017 Elsevier B.v.保留所有权利。

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