首页> 外国专利> MANUFACTURING METHOD OF CATALYST-FREE LOW TEMPERATURE SUBSTRATE GROWN GRAPHENE, CATALYST-FREE LOW TEMPERATURE SUBSTRATE GROWN GRAPHENE AND MANUFACTURING APPARATUS OF CATALYST-FREE LOW TEMPERATURE SUBSTRATE GROWN GRAPHENE

MANUFACTURING METHOD OF CATALYST-FREE LOW TEMPERATURE SUBSTRATE GROWN GRAPHENE, CATALYST-FREE LOW TEMPERATURE SUBSTRATE GROWN GRAPHENE AND MANUFACTURING APPARATUS OF CATALYST-FREE LOW TEMPERATURE SUBSTRATE GROWN GRAPHENE

机译:无催化剂的低温基质生长石墨烯的制备方法,无催化剂的低温基质生长石墨烯和无催化剂的低温基质生长的石墨烯制造装置

摘要

Provided are a manufacturing method of catalyst-free low temperature substrate grown graphene, catalyst-free low temperature substrate grown graphene, and an electronic part comprising the same. More particularly, the catalyst-free manufacturing method for catalyst-free low temperature substrate grown graphene grows graphene on a substrate without having a catalyst layer by conducting inductively coupled plasma-chemical vapor deposition (ICP-CVD) while supplying carbon-containing gas at the temperature less than or equal to 500°C. The carbon-containing gas comprises: hydrocarbon gas; and inert gas such as argon, helium, etc.;COPYRIGHT KIPO 2016
机译:提供了一种无催化剂的低温衬底生长的石墨烯的制造方法,无催化剂的低温衬底生长的石墨烯和包括该方法的电子部件。更特别地,用于无催化剂的低温衬底生长的石墨烯的无催化剂的制造方法通过进行电感耦合等离子体化学气相沉积(ICP-CVD),同时在衬底上供应含碳气体,在不具有催化剂层的情况下在衬底上生长石墨烯。温度小于或等于500℃。含碳气体包括:烃气体;惰性气体,例如氩气,氦气等; COPYRIGHT KIPO 2016

著录项

  • 公开/公告号KR20160059467A

    专利类型

  • 公开/公告日2016-05-26

    原文格式PDF

  • 申请/专利权人 LEE YOUN TEK;

    申请/专利号KR20160028109

  • 发明设计人 LEE YOUN TEKKR;

    申请日2016-03-09

  • 分类号C01B31/04;C01B23/00;

  • 国家 KR

  • 入库时间 2022-08-21 14:14:21

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