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MANUFACTURING METHOD OF CATALYST-FREE LOW TEMPERATURE SUBSTRATE GROWN GRAPHENE, CATALYST-FREE LOW TEMPERATURE SUBSTRATE GROWN GRAPHENE AND MANUFACTURING APPARATUS OF CATALYST-FREE LOW TEMPERATURE SUBSTRATE GROWN GRAPHENE
MANUFACTURING METHOD OF CATALYST-FREE LOW TEMPERATURE SUBSTRATE GROWN GRAPHENE, CATALYST-FREE LOW TEMPERATURE SUBSTRATE GROWN GRAPHENE AND MANUFACTURING APPARATUS OF CATALYST-FREE LOW TEMPERATURE SUBSTRATE GROWN GRAPHENE
Provided are a manufacturing method of catalyst-free low temperature substrate grown graphene, catalyst-free low temperature substrate grown graphene, and an electronic part comprising the same. More particularly, the catalyst-free manufacturing method for catalyst-free low temperature substrate grown graphene grows graphene on a substrate without having a catalyst layer by conducting inductively coupled plasma-chemical vapor deposition (ICP-CVD) while supplying carbon-containing gas at the temperature less than or equal to 500°C. The carbon-containing gas comprises: hydrocarbon gas; and inert gas such as argon, helium, etc.;COPYRIGHT KIPO 2016
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