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机译:硼掺杂对MEMS应用HFCVD金刚石膜残余应力的影响
1School of Mechanical Engineering Shanghai Jiao Tong University Shanghai 200240 P. R. China;
1School of Mechanical Engineering Shanghai Jiao Tong University Shanghai 200240 P. R. China;
1School of Mechanical Engineering Shanghai Jiao Tong University Shanghai 200240 P. R. China;
HFCVD diamond film; boron-doping; residual stress; ICP-RIE; cantilever; MEMs; laser dopler vibrometer;
机译:硼掺杂对MEMS应用HFCVD金刚石膜残余应力的影响
机译:X射线衍射测量HFCVD掺硼金刚石薄膜的应力研究
机译:X射线衍射测量HFCVD掺硼金刚石薄膜的应力研究
机译:Ti,SiC,Si和Ta基板上的硼掺杂HFCVD金刚石膜的沉积和表征
机译:重硼掺杂超导金刚石在设备应用中的热丝化学气相沉积(HFCVD)研究。
机译:掺硼金刚石薄膜中电导率和自由载流子的Drude模型分析及其内应力和应变研究
机译:硼掺杂金刚石薄膜的电导率和自由载体的磨牙模型分析及其内部应力和菌株的研究