BORON-DOPED DIAMOND THIN FILM FORMATION METHOD, BORON-DOPED DIAMOND NON-DEPOSITED MEMBER PRODUCED THEREBY, AND HYBRID THIN FILM DEPOSITION APPARATUS USED FOR SAME

摘要

According to the present invention, a boron-doped diamond thin film formation method comprises: (a) a step of preparing a base material containing a titanium (Ti) component; (c) a step of forming an intermediate layer containing at least one of niobium (Nb) and tantalum (Ta) on the base material; and (d) a step of forming a boron-doped diamond thin film on the intermediate layer. A boron-doped diamond non-deposited member produced thereby comprises: a base material containing a titanium (Ti) component; an intermediate layer deposited on the base material and containing at least one of niobium (Nb) and tantalum (Ta); and a boron-doped diamond thin film deposited on the intermediate layer. In addition, a hybrid thin film deposition apparatus for forming a boron-doped diamond thin film of the present invention used for the same comprises: a chamber having a processing space formed therein; a mounting jig formed to be long in the vertical direction inside the chamber and having the base material mounted thereon; a rotation portion for rotating the mounting jig; a source portion provided at a position spaced apart in the circumferential direction of the mounting jig in the inside of the chamber; and a heating portion provided between the mounting jig and the source portion to apply heat to the base material mounted on the mounting jig.;COPYRIGHT KIPO 2017