采用拉曼光谱技术分析了不同生长气压和碳源浓度下,硅基HFCVD硼掺杂金刚石薄膜中的残余应力,并使用光刻和反应离子刻蚀技术加工出多种金刚石薄膜微结构.研究结果表明:利用热丝CVD沉积的硅基金刚石薄膜内存在残余压应力,通过优化生长气压,可以有效降低金刚石薄膜的残余压应力,在生长气压从1.3 kPa增加至6.5 kPa的过程中,晶格缺陷增加,残余压应力减小.碳源浓度的变化对残余应力的影响较小,但对薄膜质量影响较大.采用低残余应力的金刚石薄膜通过光刻和反应离子刻蚀获得了悬臂梁、角加速度计、声学振膜等微结构.%Raman spectroscopy was applied to analyze the residual stress of boron-doped diamond film on silicon wafer by different growth pressures and different carbon source concentrations.Photolithography and etching technique were used to fabricate diamond micro-structures.Results show that the residual stress in the diamond films generally tends to be compressive stress.It is also found that the residual stress in the diamond film could significantly be reduced by optimizing the growth pressure and that it changes from compressive stress to tensile stress while the growth pressure is increased from 1.3 kPa to 6.5 kPa.The carbon source concentration has small effect on residual stress but big influence on the diamond film quality.In the end,cantilever,angle accelerometer,acoustic diaphragm were fabricated from the low residual diamond film by photolithography and etching.
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