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Structural, optical and photoelectrical properties of Cu2O films electrodeposited at different pH

机译:Cu2O膜在不同pH下电沉积的结构,光学和光电性能

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摘要

Cu2O films were electrodeposited on FTO and ZnO thin film substrates under different electrolyte pH. The Cu2O films on FTO substrates have a preferred orientation along the (111) planes for the match between the growing Cu2O film and the FTO substrate at the interface, whereas a transition of the preferred orientation from (100) to (111) occurs for the films on ZnO thin film substrates as electrolyte pH increases. All the Cu2O films show very similar photoluminescence (PL) spectra characteristics with a green emission band, which is related to the inter-band transitions, and a red broad emission band, which is assigned to the defects. The relative weak PL spectra for the films on ZnO thin film substrates can be ascribed to the energy and charge transfer from Cu2O to ZnO. Under light illumination, the Cu2O films on ZnO thin film substrates show the photovoltaic effect, which indicates the formation of Cu2O/ZnO heterojunctions. The photoresponse of the heterojunctions at zero bias voltage shows high sensitivity to visible light illumination, with excellent stability and reproducibility. The photocurrent is larger for the heterojunctions of the Cu2O film deposited at the pH 10.5, which is attributed to the good crystalline quality of the Cu2O film and strong built-in electric field of the ZnO/Cu2O interface.
机译:在不同的电解质pH下,在FTO和ZnO薄膜基板上电沉积Cu2O膜。 FTO基板上的Cu2O膜具有沿着(111)平面的优选取向,用于在界面处的生长Cu2O膜和FTO衬底之间的匹配,而优选取向从(100)到(111)的转变发生ZnO薄膜基材上的薄膜作为电解质pH增加。所有Cu2O膜都显示出非常相似的光致发光(PL)光谱特性,其具有与带间过渡之间的绿色发射带,以及被分配给缺陷的红色宽发射带。 ZnO薄膜基板上的膜的相对弱PL光谱可以归因于来自Cu2O至ZnO的能量和电荷转移。在光照照射下,ZnO薄膜基材上的Cu2O膜显示出光伏效应,表明Cu2O / ZnO杂交的形成。零偏置电压的异质功能的光响应显示出可见光照明的高灵敏度,具有出色的稳定性和再现性。光电流对于沉积在pH105处的Cu 2 O膜的异质函数较大,这归因于Cu2O膜的良好晶体质量和ZnO / Cu2O界面的强内置电场。

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  • 来源
    《RSC Advances》 |2016年第6期|共7页
  • 作者单位

    Tianjin Univ Technol Tianjin Key Lab Photoelect Mat &

    Devices Key Lab Display Mat &

    Photoelect Devices Minist Educ Tianjin 300384 Peoples R China;

    Tianjin Univ Technol Tianjin Key Lab Photoelect Mat &

    Devices Key Lab Display Mat &

    Photoelect Devices Minist Educ Tianjin 300384 Peoples R China;

    Tianjin Univ Technol &

    Educ Sch Sci Tianjin 300222 Peoples R China;

    Tianjin Univ Technol Tianjin Key Lab Photoelect Mat &

    Devices Key Lab Display Mat &

    Photoelect Devices Minist Educ Tianjin 300384 Peoples R China;

    Tianjin Univ Technol Tianjin Key Lab Photoelect Mat &

    Devices Key Lab Display Mat &

    Photoelect Devices Minist Educ Tianjin 300384 Peoples R China;

    Tianjin Univ Technol Tianjin Key Lab Photoelect Mat &

    Devices Key Lab Display Mat &

    Photoelect Devices Minist Educ Tianjin 300384 Peoples R China;

    Tianjin Univ Technol Tianjin Key Lab Photoelect Mat &

    Devices Key Lab Display Mat &

    Photoelect Devices Minist Educ Tianjin 300384 Peoples R China;

    Tianjin Univ Technol Tianjin Key Lab Photoelect Mat &

    Devices Key Lab Display Mat &

    Photoelect Devices Minist Educ Tianjin 300384 Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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