Analysis and optimization of 1.5-mu m InGaAsP/InP MQWs electroabsorption modulator

摘要

The effects of doping profile and well thickness on the light extinction properties of electroabsorption modulators (EAM) are studied experimentally. It is found that both light p type doping in the InP cladding layer and a large well thickness help to get higher extinction ratios at a given reverse bias voltage. A 3D EAM model has been built for optimizing the performance of EAMs. The simulation results are in a good agreement with the experimental results. With the optimized EAM designs, a modulator with an over 20 dB extinction ratio at a low bias voltage is demonstrated.