Analysis of the Internal Quantum Efficiency of Gallium-nitride-based Light-emitting Diodes from the Transient Electro-luminescence Characteristics

摘要

A simple method of measurement which can estimate the recombination coefficients and the internal quantum efficiency (IQE) in GaN-based light-emitting diodes (LEDs) has been developed. The proposed method uses optical power decay, which can reflect real operational circumstances. The method, which is based on the electro-luminescence, is expected to extract values of the IQE in GaN-based LEDs effectively.