Comparison of gas-phase reactions in low-temperature growth of Si films by photochemical vapor deposition and the hot wire cell method

摘要

Mercury sensitized photochemical vapor deposition and hot wire cell method were studied as growth techniques of Si films at low temperature (<400 degrees C). Tn both techniques, the boundaries indicating the structural transition of the Si films were observed to depend on the substrate temperature and the total pressure. The results of the theoretical analysis indicated that the film structure is correlated with the ratio of atomic hydrogen to SiH3 radical on the growing surface. By the hot wire method, polycrystalline Si films were successfully obtained on glass substrate without H-2 dilution. These films had a growth rate >1 nm/s, which was about 10 times larger than that of the films grown by photochemical vapor deposition. This method can generate a larger flux of SiH3 and the flux of H is also large enough to induce crystallization on glass substrate. (C) 2000 Elsevier Science B.V. All rights reserved. [References: 10]