Homoepitaxial growth of single crystalline CVD-diamond

摘要

The influence of temperature, pressure and holder geometry on the homoepitaxial single crystalline diamond growth in a microwave-assisted chemical vapor deposition reactor will be introduced and discussed in detail. Optimized diamond growth conditions were determined for homoepitaxy on (100)-oriented high-temperature high-pressure (HPHT) seed crystals using Raman scattering and confocal-micro-photoluminescence spectroscopy measurements. (C) 2016 Elsevier B.V. All rights reserved.