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Next generation light exposure technology: EUV

机译:下一代曝光技术:EUV

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The basics for the next generation light exposure technology using extreme ultraviolet (EUV) light whose wavelength is a tenth as short as that of optically exposed light are beginning to take shape. The Association of Super Advanced Electronics Technologies (ASET) has recently established a reflective masking technology for EUV exposure. ASET has already achieved advanced development stages concerning the nonspherical reflective mirror measurement technology, which is absolutely necessary for basic resist technology for EUV light or exposure devices, so the latest accomplishment indicates that ASET has solved basic problems in three elemental technological fields: exposure devices, masks, and resist, and also that a realistic expectation may be placed in the near future on the establishment of an EUV exposure technology that allows for less than 70nm in LSI design rule.
机译:使用波长为光学曝光波长十分之一的极紫外(EUV)光的下一代曝光技术的基础已经开始形成。超先进电子技术协会(ASET)最近建立了一种用于EUV曝光的反射掩膜技术。 ASET已达到有关非球面反射镜测量技术的高级开发阶段,这对于EUV光或曝光设备的基本抗蚀剂技术是绝对必要的,因此最新成果表明ASET解决了三个基本技术领域的基本问题:曝光设备,掩膜,抗蚀剂,以及在不久的将来,对于建立EUV曝光技术的现实期望,EUV曝光技术允许LSI设计规则小于70nm。

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