Acid Generation Efficiency of EUV PAGs via Low Energy Electron Exposure

摘要

Optimizing the photochemistry of extreme ultraviolet (EUV) photoresists can lead to faster, more efficient resists needed for implementation of EUV lithography into high volume manufacturing. EUV photoresists must simultaneously meet three requirements: improved resolution, low line edge roughness (LER), and high sensitivity. Common EUV photoresists utilize photoacid generators (PAGs) to improve sensitivity, which is affected by many variables, such as developer choice, developer concentration, PAG quantum yield, etc. Isolating one of these parameters will aid in the optimization of sensitivity. Prior work using alternate methods shows it is possible for resists to generate 5-6 acids per absorbed photon. However, the energy of the weakest bond in a typical PAG molecule is on the order of a few electron volts, it should be possible to reach much higher quantum yields with EUV (92 eV) photons. The photochemistry in EUV lithography is believed to be dominated by the energetic electrons generated from ionization. Investigating the acid generation efficiency for a variety of PAGs and concentrations upon electron exposure may lead to the development of resists with higher quantum yield, improving current EUV photoresist platforms. In this study, the reactions between PAG molecules and electrons were measured by using a mass spectrometer to monitor the levels of small molecules produced by PAG decomposition that outgassed from the film.