Novel IGBT SPICE Model with non-destructive parameter extraction and comparison with measurements

摘要

A subcircuit-based model for the insulated gate bipolar transistor (IGBT) is proposed and optimized. The IGBT wide based conductivity modulated resistor is effectively equivalent by using a voltage controlled resistor. Based on analytical equation describing the semiconductor physics, the model parameters are extracted accurately via measured data without device destruction. Employing the MOS-level-8 SPICE model, the proposed IGBT subcircuit model gives more simulation accuracy and easy convergence, the simulation results are verified by comparison with measured results.