Non-destructive parameters extraction for IGBT spice model and compared with measurements

摘要

A subcircuit based model for the insulated gate bipolar transistor (IGBT) which is fully spice compatible is proposed and optimized. The IGBT wide base conductivity modulated resistor is effectively modeled as a voltage controlled resistor (VCR). Based on analytical equation describing the semiconductor device physics, the model parameters are extracted accurately via measured data without devices destruction. Employing the MOS-level-8 SPICE model, the proposed IGBT subcircuit model gives more simulation accuracy and easy convergence. The simulation results are verified by comparison with measurement results and found to be in good agreement. The average error is within 8%, which is better than some previously reported results of semi-mathematical IGBT models.