IBM Alliance Develops 32 nm High-k/Metal Gate SRAM

摘要

IBM Corp. (Armonk, N.Y.) has developed a test SRAM array using 32 nm high-k/metal gate process technology, an achievement that puts IBM and its Fishkill alliance development partners on track to introduce 32 nm technology in the second half of 2009. Gary Patton, vice president of IBM's Semiconductor Research and Development Center in Fishkill, N.Y., said high-k/metal gate technology will become available not only to the Fishkill alliance development partners, but also to fabless design teams that use one of the alliance partners to foundry their 32 nm designs.