InAs quantum dot formed on GaNAs buffer layer by Metalorganic Chemical Vapor Deposition

摘要

We investigated MOCVD grown InAs QDs on a GaNAs buffer layer. Distribution uniformity and shape of QDs on buffer layers were characterized for different nitrogen (N) compositions from 0% to 2%. It was found that the distribution of QDs on a GaNAs buffer layer became more uniform than that on a GaAs and the coalescence of QDs was suppressed. Increase of the aspect ratio (diameter/height) was also observed by increase of N composition.