机译:在高表面温度下暴露于高通量等离子体的自毁钨中的氘保留降低
FOM Institute DIFFER-Dutch Institute for Fundamental Energy Research, Association EURATOM-FOM, Partner in the Trilateral Euregio Cluster, NL-3439 MN Nieuwegein, The Netherlands;
Max-Planck-Institut fuer Plasmaphysik, Boltzmannstrasse 2, D-85748 Garching, Germany;
FOM Institute DIFFER-Dutch Institute for Fundamental Energy Research, Association EURATOM-FOM, Partner in the Trilateral Euregio Cluster, NL-3439 MN Nieuwegein, The Netherlands Van't Hoff Institute for Molecular Sciences, niversity of Amsterdam, Science Park 904, NL-1098 XH Amsterdam, The Netherlands;
Radiation Science & Technology, Delft University of Technology, Mekelweg 15, NL-2629 JB Delft, The Netherlands;
FOM Institute DIFFER-Dutch Institute for Fundamental Energy Research, Association EURATOM-FOM, Partner in the Trilateral Euregio Cluster, NL-3439 MN Nieuwegein, The Netherlands;
机译:暴露于高通量等离子体的自毁钨中氘保留的饱和度
机译:高通量氘等离子体暴露的钨和钨钽合金的表面改性及其对氘保留的影响
机译:低能,高通量D等离子体暴露的ITER级多晶钨中表面形态和氘保留的温度依赖性
机译:钨和钼暴露于低能量,高通量氘质等离子体的表面改性和氘保留
机译:氘化在面向锂的石墨等离子表面中的基本机理。
机译:暴露于氢等离子体的二硫化钨纳米粒子的氢化学构型和热稳定性
机译:自我受损钨中的氘潴留饱和度暴露于高通量等离子体