APPARATUS AND METHOD WHICH REDUCE THE EROSION RATE OF SURFACES EXPOSED TO HALOGEN-CONTAINING PLASMAS

摘要

APPARATUSAND METHOD WHICH REDUCE THE EROSION RATE OF SURFACES EXPOSED TO HALOGEN-CONTAINING PLASMAS [0092] OF THE DISCLOSURE 2 [0093] A ceramic article which is resistant to erosion by halogen-containing 3 plasmas used in semiconductor processing. The ceramic article includes ceramic which 4 is multi-phased, typically including two phases to three phases. In a first embodiment, 5 the ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 6 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from 7 about 10 mole % to about 30 mole %; and at least one other component, selected from the 8 group consisting of aluminum oxide, hafrtium oxide, scandium oxide, neodymium oxide, 9 niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and 10 combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 11 xnole%. In a second embodiment, the ceramic article includes ceramic which is formed 12 from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 13 mole % and zirconium oxide at a molar concentration ranging from about 10 mole % to 14 about 30 mole %,, wherein a mean grain size of said ceramic ranges from about 2 |im to 15 about 8 [im. In a third embodiment, the ceramic article includes ceramic which is formed 16 from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 17 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to 18 about 6 mole %. Figure 2C 32