Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers

M. D. Kim; T. W. Kim

首页> 外文期刊>Journal of Materials Science >Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers

【24h】

Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers

机译：由于使用了AlN量子点缓冲层，改善了在蓝宝石衬底上生长的GaN外延膜的结晶度

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

著录项
相似文献
相关主题

著录项

来源
《Journal of Materials Science》 |2005年第20期|5533-5535|共3页
作者
M. D. Kim; T. W. Kim;
展开▼
作者单位

Department of Physics Chungnam National University;

Advanced Semiconductor Research Center Division of Electrical and Computer Engineering Hanyang University;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-prrs-thick a-plane AlN films grown on r-plane sapphire substrates [J] . Lin Chia-Hung, Tamaki Shinya, Yamashita Yasuhiro, Annales de l'I.H.P . 2016,第8期

机译：AlN缓冲层厚度对R平面蓝宝石基板上生长的10-PRRS厚的A平面ALN薄膜结晶和表面形态的影响
2. Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer [J] . Ke Wen-Cheng, Liang Zhong-Yi, Tesfay Solomun Teklahymanot, Applied Surface Science . 2019,第NOVa15期

机译：通过嵌入杂化AlN缓冲层在石墨烯/蓝宝石衬底上外延生长和表征GaN薄膜
3. Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer [J] . Ke Wen-Cheng, Liang Zhong-Yi, Tesfay Solomun Teklahymanot, Applied Surface Science . 2019,第Nova15期

机译：通过嵌入杂化AlN缓冲层在石墨烯/蓝宝石衬底上外延生长和表征GaN薄膜
4. Improvement in crystal quality of GaN films with quantum dots as buffer layers grown on sapphire substrates by molecular beam epitaxy [C] . D Huang, C W Litton, M A Reshchikov, International symposium on compound semiconductor . 2002

机译：随着量子点作为在蓝宝石衬底上生长的缓冲层，通过分子束外延在蓝宝石衬底上改善GaN膜的晶体质量
5. TEM characterization of gallium nitride/sapphire interface and the buffer layer on sapphire substrate by MOCVD. [D] . Shea, Brian Daniel. 2001

机译：氮化镓/蓝宝石界面和蓝宝石衬底上缓冲层的TEM表征通过MOCVD。
6. Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers [O] . Guijuan Zhao, Lianshan Wang, Shaoyan Yang, -1

机译：使用双AlN缓冲层在m面蓝宝石上生长的半极性（11-22）GaN的各向异性结构和光学性质
7. Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD [O] . Çörekçi, S., Öztürk, M.K., Bengi, A., 2011

机译：通过MOCVD表征蓝宝石衬底上生长的AlN缓冲层和厚GaN层

Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers

著录项

相似文献

相关主题

期刊订阅