Kinetics of dopant incorporation in GaAs grown by organometallic vapor-phase epitaxy

摘要

A diffusive capture reaction of dopant atoms by relevant host atoms, via the Rideal-Eley mechanism, in GaAs grown by organometallic vapor-phase epitaxy is shown to result in the dopant concentration in the crystal acquiring a dependence on P_(Ga) (which is proportional to the growth rate) in agreement with data on S_(as), Zn_(Ga), and Si_(Ga) where P_(Ga) is the partial pressure of trimethylgallium in the input gas stream.