Magnetron sputtering growth and characterization of single crystal ZnO thin films on Si using GaN interlayer

摘要

It is demonstrated that single crystal ZnO films can be grown on Si (111) substrates using a GaN (0001) interlayer, as confirmed by X-ray diffraction (XRD) and transmission electron microscopy observation. Photoluminescence spectra of the ZnO films exhibited sharp and intense emission with line width of 155 meV at room temperature and 29 meV at 12K. High resolution XRD measurement showed (0004) peak with full-width at half-maximum value of about 230 arcsec. These results are comparable with previously reported values from ZnO/Al_2O_3 films grown by metalorganic chemical vapor deposition and represent significant improvement over the characteristics of the ZnO films directly grown on Si.