InAlN barrier layer for GaN-based FET InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface

摘要

We report our recent development of an InAIN barrier layer for GaN-based FETs. We fabricated a novel structure consisting of InAlN/AlGaN/GaN. With this structure, we achieved higher electron mobility and a flatter surface than those for the conventional InAlN/GaN heterostructures. We investigated the A1N interlayer thickness dependence of mobility and surface flatness. The thickness strongly affected the mobility and the surface roughness of InAlN/GaN. In contrast, the variation of these values is suppressed for the new structure. We achieved low sheet resistance even for the new structure without an A1N interlayer. These results point to the possibility of developing GaN-based FETs with high performance and high reliability.