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机译:质子辐射诱导的GaN基微宽度发射二极管3-DB带宽增加的机理分析,用于空间光通信
Key Laboratory of Silicon Device Technology Chinese Academy of Sciences Beijing China;
Guangdong Institute of Semiconductor Industrial Technology Guangzhou China;
Key Laboratory of Silicon Device Technology Chinese Academy of Sciences Beijing China;
Guangdong Institute of Semiconductor Industrial Technology Guangzhou China;
Laboratory of Nanophotonic Functional Materials and Devices South China Normal University Guangzhou China;
Department of Physics State Key Laboratory for Artificial Microstructure and Mesoscopic Physics Peking University Beijing China;
Guangdong Institute of Semiconductor Industrial Technology Guangzhou China;
Department of Physics State Key Laboratory for Artificial Microstructure and Mesoscopic Physics Peking University Beijing China;
Key Laboratory of Silicon Device Technology Chinese Academy of Sciences Beijing China;
Key Laboratory of Silicon Device Technology Chinese Academy of Sciences Beijing China;
Guangdong Institute of Semiconductor Industrial Technology Guangzhou China;
Laboratory of Nanophotonic Functional Materials and Devices South China Normal University Guangzhou China;
Key Laboratory of Silicon Device Technology Chinese Academy of Sciences Beijing China;
Chinese Academy of Sciences Institute of Semiconductors Beijing China;
Key Laboratory of Silicon Device Technology Chinese Academy of Sciences Beijing China;
Key Laboratory of Silicon Device Technology Chinese Academy of Sciences Beijing China;
Key Laboratory of Silicon Device Technology Chinese Academy of Sciences Beijing China;
Key Laboratory of Silicon Device Technology Chinese Academy of Sciences Beijing China;
School of Materials Science and Engineering Harbin Institute of Technology Harbin China;
School of Materials Science and Engineering Harbin Institute of Technology Harbin China;
Key Laboratory of Silicon Device Technology Chinese Academy of Sciences Beijing China;
Key Laboratory of Silicon Device Technology Chinese Academy of Sciences Beijing China;
Key Laboratory of Silicon Device Technology Chinese Academy of Sciences Beijing China;
Protons; Quantum well devices; Radiation effects; Bandwidth; Light emitting diodes; Radiative recombination; Power generation;
机译:基于GaN的MID-POWER倒装芯片发光二极管,具有高3 dB带宽,可见光通信
机译:反向偏压应力下GaN基发光二极管降解机制的分析:缺陷和结温增加的影响
机译:可见光通信中使用的GaN的蓝色发光二极管的静态和动态分析
机译:GaN的发光二极管的失效机制
机译:GaN基发光二极管上的光学功能结构,用于提高光提取效率和控制发射模式。
机译:基于AgInS2 / ZnS量子点的可见光通信中具有改进带宽的白光发光二极管
机译:微升光二极管:采用ALN薄膜电极的氮化物基微胶带发射二极管,纳米级铟/锡导电细丝(小49/2018)