WAVELENGTH TUNING OF GaN-BASED LIGHT EMITTING DIODES, LIGHT EMITTING DIODE ARRAYS AND DISPLAYS BY INTRODUCTION OF DEEP DONORS

摘要

Light emitting diodes with an active region which comprises Galliium Nitride (GaN) being doped with acceptors (A) and deep donors (DD) having a binding energy in said Gallium Nitride host material of at least 50meV and leading to an impurity to impurity transition of increased wavelength.