机译:具有不同铟成分的r面蓝宝石衬底上的a面InGaN / GaN多量子阱的光学性质
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan, Republic of China;
Department of Electronic Engineering, Chang Gung University, TaoYuan, Taiwan, Republic of China;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan, Republic of China;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan, Republic of China;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan, Republic of China;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan, Republic of China;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan, Republic of China;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan, Republic of China;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan, Republic of China;
机译:铟浓度对在r面蓝宝石衬底上生长的a面InGaN / GaN量子阱的光学性能的影响
机译:钛氧化物纳米粒子旋涂在r面蓝宝石衬底上:对非极性a面GaN和InGaN / GaN多量子阱的结构和光学性质的影响
机译:r面蓝宝石上a面InGaN / GaN多量子阱的光学和结构特性的生长压力依赖性
机译:用不同铟组分的平面和C面Ingan / GaN多量子的内部量子效率行为
机译:InGaN / GaN多量子阱结构:亚微米结构,光学,电和化学性质。
机译:在a平面和m平面GaN衬底上生长的InGaN / GaN多量子阱的光学和偏振特性的研究
机译:在r面蓝宝石上生长的a面InGaN / GaN多量子阱的偏振光致发光激发光谱