机译:钛氧化物纳米粒子旋涂在r面蓝宝石衬底上:对非极性a面GaN和InGaN / GaN多量子阱的结构和光学性质的影响
School of Electrical Engineering, Korea University, Anam-dong, Seoul 136-713, Republic of Korea;
Compound Semiconductor Devices Research Center, Korea Electronics Technology Institute, Seongnam 463-816, Republic of Korea;
Compound Semiconductor Devices Research Center, Korea Electronics Technology Institute, Seongnam 463-816, Republic of Korea;
Department of Materials Science and Engineering, Hongik University, Jochiwon, Chungnam 339-701, Republic of Korea;
Korea Advanced Nano Fab Center, Suwon 443-770, Republic of Korea;
School of Electrical Engineering, Korea University, Anam-dong, Seoul 136-713, Republic of Korea;
A3. metalorganic chemical vapor deposition; B1. nitrides; B1. titanium compounds; B2. semiconducting Ⅲ-V materials;
机译:具有不同铟成分的r面蓝宝石衬底上的a面InGaN / GaN多量子阱的光学性质
机译:等离子体辅助分子束外延在(1-102)r面蓝宝石衬底上生长的非极性(11-20)a面GaN的结构和光学性质
机译:铟浓度对在r面蓝宝石衬底上生长的a面InGaN / GaN量子阱的光学性能的影响
机译:旋涂法涂覆二氧化钛纳米粒子的r面蓝宝石上a面GaN的结构和光学性质
机译:InGaN / GaN多量子阱结构:亚微米结构,光学,电和化学性质。
机译:在a平面和m平面GaN衬底上生长的InGaN / GaN多量子阱的光学和偏振特性的研究
机译:生长在a面和m面GaN衬底上的InGaN / GaN多量子阱的光学和偏振特性的研究