Third-harmonic generation from ZnO films deposited by MOCVD

摘要

Third-harmonic generation (THG) was studied from ZnO thin film deposited by the metalorganic chemical vapor deposition (MOCVD) technique on sapphire substrates at different temperatures. A strong THG signal was obtained from the film deposited at an appropriate temperature. The dependence of THG on the deposition temperatures was discussed. A third-order susceptibility χ~((3)) = 3.77 x 10~(-12) esu was deduced for a film deposited at 250 ℃. This value is similar to that observed from ZnO nanocrystalline films fabricated by pulse-laser deposition (PLD). We conclude that film structure and the crystalline quality is main factors determined the THG in the film.