High detectivity InAs quantum dot infrared photodetectors

摘要

We report a high detectivity of 3×10~(11) cm Hz~(1/2)/W at 78 K for normal-incidence quantum dot infrared photodetectors with ten layers of undoped InAs/InGaAs/GaAs quantum dot active regions. The high detectivity seen at 1.4 V corresponds to photoresponse peaks at 9.3 and 8.7 μm for positive and negative bias, respectively.