首页> 外国专利> QUANTUM DOT TYPE INFRARED DETECTOR ELEMENT, QUANTUM DOT TYPE INFRARED DETECTOR AND QUANTUM DOT TYPE INFRARED IMAGING APPARATUS

QUANTUM DOT TYPE INFRARED DETECTOR ELEMENT, QUANTUM DOT TYPE INFRARED DETECTOR AND QUANTUM DOT TYPE INFRARED IMAGING APPARATUS

机译:量子点型红外探测器,量子点型红外探测器和量子点型红外成像装置

摘要

PROBLEM TO BE SOLVED: To provide a quantum dot type infrared detector element, a quantum dot type infrared detector and a quantum dot type infrared imaging apparatus, achieving a higher sensitivity/noise ratio.;SOLUTION: In a quantum dot type infrared detector element, spacer layers are provided between each of upper and lower electrode formation layers and a quantum dot layered structure, and a thickness of a spacer layer on an emitter electrode side is made thinner than that of a spacer layer on a collector electrode side.;COPYRIGHT: (C)2015,JPO&INPIT
机译:要解决的问题:提供一种量子点型红外探测器元件,量子点型红外探测器和量子点型红外成像设备,以实现更高的灵敏度/噪声比;解决方案:在量子点型红外探测器元件中,在上下电极形成层与量子点层状结构之间分别设置隔离层,使发射极侧的隔离层的厚度比集电极侧的隔离层的厚度薄。 (C)2015年,日本特许厅&INPIT

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