...
机译:基于应变SiGe / Si单量子阱的太赫兹发射的载流子动力学
Department of Electronics Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan;
rnDepartment of Electronics Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan;
rnCenter for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan;
rnCenter for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan;
rnDepartment of Physics, University of Massachusetts-Boston, Boston, Massachusetts 02125, USA;
Sensors Directorate, Air Force Research Laboratory, Hanscom AFB, Massachusetts 01731, USA;
机译:基于应变SiGe / Si单晶的太赫兹发射的载流子动力学
机译:基于使用掺杂,成分和应变相关的SiGe:C载流子迁移率和弛豫时间的流体力学建模的SiGe:C HBT渡越时间分析
机译:太赫兹量子级联结构中载流子动力学与温度之间的关系:GaAs / AlGaAs,SiGe / Si和GaN / AlGaN器件的仿真
机译:基于SiGe的载流子注入Mach-Zehnder调制器在应变SiGe中具有增强的等离子体弥散效应
机译:超导单电子晶体管,用于基于Si / SiGe的量子点中的电荷感测。
机译:载流子传输效率及其对电信波长基于InP的量子点-量子阱结构的发射特性的影响
机译:紧张的GE / SIGE量子孔中的单孔和双孔量子点