Carrier dynamics of terahertz emission based on strained SiGe/Si single

摘要

We report analysis of the carrier distribution during terahertz emission process with carrier–phononninteraction based on p-doped strained SiGe/Si single quantum-well. The results of this analysis shownthat a considerable number of carriers can penetrate the phonon wall to become “hot” carriers on annapproximately picosecond timescale. These hot carriers relax after the removal of the appliednvoltage, generating a “second” emission in the measurement. This investigation provides annunderstanding of the carrier dynamics of terahertz emission and has an implication for the design ofnsemiconductor terahertz emitters. © 2010 American Institute of Physics. u0004doi:10.1063/1.3432075