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QUANTUM-DOT-BASED LIGHT EMITTER, MORE PARTICULARLY FOR SINGLE PHOTON EMISSION, AND METHOD FOR PRODUCING SAME
QUANTUM-DOT-BASED LIGHT EMITTER, MORE PARTICULARLY FOR SINGLE PHOTON EMISSION, AND METHOD FOR PRODUCING SAME
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机译:基于量子点的发光体,尤其是用于单光子发射的发光体及其制造方法
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摘要
Described is a light-emitting semiconductor device (100) comprising at least one nanowire (10) having at least one (AI xGa1-xN)-based nanowire portion (12), where 0 ≤ x ≤ 1, and extending along an axial direction (z), wherein the nanowire (10) has at least one InN-based quantum dot (11), which is delimited at least on one side along the axial direction (z) by the at least one nanowire portion (12) of the nanowire (10), and the nanowire (10) has a thickness less than or equal to a critical thickness, at which the at least one quantum dot (11) and the adjacent nanowire portion (12) adjoin one another without dislocation. A method for producing the light-emitting semiconductor device (100) is also described.
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机译:描述了一种发光半导体器件(100),其包括具有至少一个(AI x Sub> Ga 1-x Sub> N)基纳米线部分的至少一根纳米线(10)。 (12),其中0≤x≤1,并且沿着轴向方向(z)延伸,其中所述纳米线(10)具有至少一个基于InN的量子点(11),其至少在沿着所述方向的一侧定界。纳米线(10)的至少一个纳米线部分(12)的轴向方向(z),并且纳米线(10)的厚度小于或等于临界厚度,在该临界厚度处,至少一个量子点(11) )和相邻的纳米线部分(12)彼此相邻而没有错位。还描述了用于制造发光半导体器件(100)的方法。
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