QUANTUM-DOT-BASED LIGHT EMITTER, MORE PARTICULARLY FOR SINGLE PHOTON EMISSION, AND METHOD FOR PRODUCING SAME

摘要

Described is a light-emitting semiconductor device (100) comprising at least one nanowire (10) having at least one (AI xGa1-xN)-based nanowire portion (12), where 0 ≤ x ≤ 1, and extending along an axial direction (z), wherein the nanowire (10) has at least one InN-based quantum dot (11), which is delimited at least on one side along the axial direction (z) by the at least one nanowire portion (12) of the nanowire (10), and the nanowire (10) has a thickness less than or equal to a critical thickness, at which the at least one quantum dot (11) and the adjacent nanowire portion (12) adjoin one another without dislocation. A method for producing the light-emitting semiconductor device (100) is also described.