机译:极化拉曼光谱对非极性,半极性和极性块状GaN衬底的取向依赖性
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan;
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan;
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan;
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan;
Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan;
机译:块状GaN衬底的结构特性:结构各向异性对非极性和半极性晶体的影响
机译:在非极性和半极性块状GaN衬底上GaN的选择性区域生长
机译:通过MOCVD在r面蓝宝石衬底上生长的非极性a面GaN薄膜的偏振拉曼散射研究
机译:图案化Si基板上非极性和半极性GaN发光体的最新进展
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:R平面蓝宝石上外延横向过生长非极性a平面GaN的空间分辨和依赖于方向的拉曼映射
机译:通过极化光反射光谱研究的不同非极性取向的GaN膜中的偏振各向异性
机译:为下一代电子和光电极器件开发按需非极性和半极性块状氮化镓材料