机译:使用改进的纳米球光刻技术制造二维InGaN / GaN光子晶体结构
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD,United Kingdom;
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD,United Kingdom;
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD,United Kingdom;
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD,United Kingdom;
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD,United Kingdom;
机译:使用改进的纳米球光刻技术制造二维InGaN / GaN光子晶体结构
机译:使用可热固化的单体型纳米压印光刻技术在GaN基发光二极管上制造二维光子晶体图案
机译:纳米球光刻技术生成的具有不同几何形状的光子晶体增强了InGaN发光二极管的发光
机译:纳米球面照相术制备含GE2SB2TE5纳米孔二维光子晶体
机译:使用纳米球面光刻和RIE刻蚀制造二维纳米结构阵列及其在光学器件中的应用。
机译:聚苯乙烯纳米光学光刻法制备的光子晶体结构P-GAN纳米棒的研究提高了INGAN / GAN绿色发光二极管光提取效率
机译:使用纳米球光刻制造和改进纳米柱InGaN / GaN发光二极管