机译:直流溅射功率对负偏压照明应力下非晶铟镓锌氧化物薄膜晶体管行为的影响:实验分析与器件仿真相结合
School of Electrical Engineering, Kookmin University, Seoul 136-702, South Korea;
Department of Materials Science and Engineering, KAIST, Daejeon 305-701, South Korea;
School of Electrical and Electronic Engineering, Yonsei University, Seodaemun-gu, Seoul 120-749, South Korea;
School of Electrical Engineering, Kookmin University, Seoul 136-702, South Korea;
School of Electrical Engineering, Kookmin University, Seoul 136-702, South Korea;
Department of Materials Science and Engineering, Chungnam National University, Daejeon 305-764, South Korea;
School of Electrical Engineering, Kookmin University, Seoul 136-702, South Korea;
机译:双活性层非晶铟镓锌氧化物薄膜晶体管的负偏压照明应力稳定性
机译:非晶InGaZnO薄膜晶体管-第二部分:负偏置照明应力引起的不稳定性的建模和仿真
机译:应用负漏极偏压抑制非晶InGaZnO薄膜晶体管中负栅极偏压引起的退化和照明应力
机译:负偏压和照明应力下漏极偏压对非晶InGaZnO薄膜晶体管不稳定性的影响
机译:铟镓锌氧化物和锌锡氧化物薄膜晶体管的制造工艺评估和负偏压照明应力研究。
机译:A-Ingazno薄膜晶体管中光漏电流和负偏压照明应力的退火诱导稳定性的定量分析
机译:在具有各种有源层厚度的无定形Ingazno薄膜晶体管中探索光吞蓄电流和光突出的负偏置不稳定性