机译:采用自顶向下方法制造常关型GaN纳米线全能FET
School of Electronics Engineering, Kyungpook National University, Daegu 702-701, South Korea,Institute of Semiconductor Fusion Technology, Kyungpook National University, Daegu 702-701, South Korea;
School of Electronics Engineering, Kyungpook National University, Daegu 702-701, South Korea;
School of Electronics Engineering, Kyungpook National University, Daegu 702-701, South Korea;
SOITEC, Bernin 38190, France;
Institute of Microelectronics, Electromagnetism and Photonics, Grenoble Polytechnic Institute, Minatec, Grenoble 38016, France;
Korea Institute of Science and Technology, Seoul 02792, South Korea;
School of Electronics Engineering, Kyungpook National University, Daegu 702-701, South Korea;
机译:通过自上而下的方法制造AlGaN / GaNΩ型纳米线鳍状FET
机译:自上而下研究全栅硅纳米线MOSFET的自热效应
机译:通过自上而下的制造方法垂直的GaN-On-GaN纳米线肖特基屏障二极管
机译:从自上而下方法(邀请)从栅极 - 全面硅纳米线晶体管的制造和运输行为研究
机译:常压高电子迁移率晶体管的设计,仿真和制造,具有温度稳定性研究
机译:具有ALD-Al2O3栅极电介质的全离子注入常关GaN DMOSFET
机译:通过可控极性自上而下地制造门 - 全围绕垂直堆叠的硅纳米线FET