机译:铝诱导结晶在石墨烯上制备Si(111)晶体薄膜
Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway;
Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway,CrayoNano AS, Otto Nielsens vei 12, NO-7052 Trondheim, Norway;
Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway,CrayoNano AS, Otto Nielsens vei 12, NO-7052 Trondheim, Norway;
机译:Si / Al层厚度对铝诱导结晶形成的多晶硅薄膜的连续性,晶体取向和生长动力学的影响
机译:铝诱导的多晶硅锗薄膜的结晶
机译:铝诱导结晶法制备大晶粒厚的多晶硅薄膜,用于太阳能电池
机译:铝在高度失配的晶体基底上诱导的Si(111)结晶
机译:铝诱导结晶沉积和表征硅薄膜。
机译:在Ge(100)(110)和(111)衬底上制备SrGe2薄膜
机译:使用铝诱导结晶形成的Si(111)模板层对非单晶基材上的高度导向GaN薄膜的杂膜(Physte Solidi RRL 3/2018)