ALUMINUM-INDUCED CRYSTALLIZATION OF POLY-CRYSTALLINE SILICON-GERMANIUM THIN FILMS

摘要

In this work, the growth of poly-crystalline silicon-germanium (poly-SiGe) thin films on single-crystalline silicon (sc-Si) substrates by aluminum-induced crystallization (AIC) has been investigated at low temperatures. Experimentally, the aluminum and amorphous germanium (a-Ge) films were evaporated onto the sc-Si substrates to form the a-Ge/Al/sc-Si structure and then annealed at 550℃. The XRD results show that the initial transition from amorphous structure to polycrystalline structure occurs after 20 minutes of AIC annealing at a temperature of 550℃. The fraction x of the poly-SixGel-x is increased with the annealing time due to the limited Ge amount in the Ge/Al/sc-Si structure.