X-Ray Lithography Mask Metrology: Use of Transmitted Electrons in an SEM for Linewidth Measurement

摘要

X-ray masks present a measurement object that is different from most other objects used in semiconductor processing because the support membrane is, by design, x-ray transparent. This characteristic can be used as an advantage in electron beam-based x-ray mask metrology since, depending upon the incident electron beam energies, substrate composition and substrate thickness, the membrane can also be essentially electron transparent. The areas of the mask where the absorber structures are located are essentially x-ray opaque, as well as electron opaque. This paper shows that excellent contrast and signal-to-noise levels can be obtained using the transmitted-electron signal for mask metrology rather than the more commonly collected secondary electron signal. Monte Carlo modeling of the transmitted electron signal was used to support this work in order to determine the optimum detector position and characteristics, as well as in determining the location of the edge in the image profile. The comparison between the data from the theoretically-modeled electron beam interaction and actual experimental data were shown to agree extremely well, particularly with regard to the wall slope characteristics of the structure. Therefore, the theory can be used to identify the location of the edge of the absorber line for linewidth measurement. This work provides one approach to improved x-ray mask linewidth metrology and a more precise edge location algorithm for measurement of feature sizes on x-ray masks in commercial instrumentation. This work also represents an initial step toward the first SEM-based accurate linewidth measurement standard from NIST, as well as providing a viable metrology for linewidth measurement instruments of x-ray masks for the lithography community.