离子辅助沉积掺铝氧化锌透明导电膜的研究

摘要

报道了采用离子辅助电子枪蒸发技术制备优质氧化锌透明导电膜的工艺和结果， 分析了源掺杂， 镀膜气氛， 衬底温度等参数与膜的电导率及透光特性的关系， 作出了电阻率低达2×10-3Ω*cm， 厚为400nm的膜的方块电阻为1×103Ω/□， 可见光透过率大于80％的优质透明导电膜。 实验表明氧离子辅助蒸发可增加氧化锌分子的能量， 提高其迁移率， 显著提高薄膜的致密程度； 氧离子能使分解的锌原子充分氧化； 离子轰击可平滑薄膜表面。 总之， 氧离子辅助蒸发在较低温度下形成优质氧化锌透明导电膜中起关键作用%The processing technology and the results of high quality ZnO thin solid films prepared by active electron beam evaporation with IAD are reported. The typical properties of the film are as followings: The resistivity is as low as 2×10-3Ω*cm. The sheet resistance of the film with thickness of 4×10-8cm is 1000Ω/□, and the average transparence for visible light is higher than 80%. The dependence of the films on doping of the source, atmosphere of the evaporating chamber, substrate temperature, etc. is analysed as well. The experimental results show that the ion assistant deposition(IAD) plays an important role in processing AZO film