Monte Carlo simulations of temperature-dependent electron mobility in GaN

摘要

We present Monte Carlo calculations of the temperature-dependent electron mobilities in GaN. The role of ionized impurities and defects in bulk material is evaluated. We demonstrate that space-charge scattering can play an important role in samples containing substantial defects. The theoretical temperature dependence of the electron mobility in a quantum well based GaN structure is also analyzed. The predicted values yield a theoretical upperbound fairly close to measured data.