Department of Physics, Chemistry and Biology, Linkoeping University SE-581 83 Linkoeping, Sweden;
Department of Physics, Chemistry and Biology, Linkoeping University SE-581 83 Linkoeping, Sweden Caracal Inc., 611 Eljer Way, Ford City, PA 16226, USA;
Department of Physics, Chemistry and Biology, Linkoeping University SE-581 83 Linkoeping, Sweden;
Department of Physics, Chemistry and Biology, Linkoeping University SE-581 83 Linkoeping, Sweden;
Department of Physics, Chemistry and Biology, Linkoeping University SE-581 83 Linkoeping, Sweden;
Department of Physics, Chemistry and Biology, Linkoeping University SE-581 83 Linkoeping, Sweden;
chloride-based CVD growth; high growth rate; epilayers;
机译:基于氯化物的SiC外延生长向低温整体生长
机译:氯化物SiC外延生长的生长特性
机译:在垂直热壁反应器中氯化物基CVD在4H-SiC外延生长期间消除硅液滴形成
机译:集中氯化物外延生长4H-SiC
机译:超音速分子束在Si(100)上外延生长β-SiC。
机译:各种缺陷对4H-SiC肖特基二极管性能的影响及其与外延生长条件的关系
机译:浓缩的氯化物基外延生长4H-SiC